Electrical characterization of Mg‐doped GaN grown by metalorganic vapor phase epitaxy
نویسندگان
چکیده
منابع مشابه
GaN / GaAs ( 1 0 0 ) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor
Superlattices of cubic gallium nitride (GaN) and gallium arsenide (GaAs) were grown on GaAs(1 0 0) substrates using metalorganic vapor phase epitaxy (MOVPE) with dimethylhydrazine (DMHy) as nitrogen source. Structures grown at low temperatures with varying layer thicknesses were characterized using high resolution X-ray diffraction and atomic force microscopy. Several growth modes of GaAs on Ga...
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Manuscript received September 27, 1999. Manuscript revised October 20, 1999. † The authors are with NTT Cyber Space Laboratories, Musashino-shi, 180-8585 Japan. a) E-mail: [email protected] SUMMARY We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure con...
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Self-assembled InGaN quantum dots (QDs) have been grown using metalorganic vapor-phase epitaxy (MOVPE), without using antisurfactant. Using 120 s annealing, InGaN QDs have been successfully formed with a circular base diameter of 40 nm and an average height of 4 nm, with QDs density of 4 10 cm . The InGaN QDs have peak photoluminescence (PL) wavelengths of 519 and 509 nm for samples without and...
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We report on the growth of planar semipolar (101̄1) GaN on (112̄3) pre-patterned sapphire. This method allows the growth of semipolar oriented (101̄1) GaN on large scale. By x-ray diffaction, only the peaks of the desired (101̄1) plane could be observed. The in-plane orientations could be determined as [0001]GaN ‖ [0001]sapphire and [112̄0]GaN ‖ [101̄0]sapphire. Scanning electron microscopy, transmis...
متن کاملPolarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals
F. Tuomisto; 1; 5, T. Suski1, H. Teisseyre1, M. Krysko1, M. Leszczynski1, B. Lucznik1, I. Grzegory1, S. Porowski1, D. Wasik2, A. Witowski2, W. Gebicki3, P. Hageman4, and K. Saarinen5 1 High Pressure Research Center, Unipress, Polish Academy of Sciences, 01-142 Warsaw, Poland 2 Institute of Experimental Physics, Warsaw University, Hoza 69, Warsaw, Poland 3 Warsaw University of Technology, Koszyk...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1996
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.116144